Classification of dynamical switching regimes in a three-layered ferromagnetic nanopillar governed by spin-polarized injection current and external magnetic field. I. Longitudinal anisotropy

Ostrovskaya N.V., Skidanov V.A., Iusipova I.A.
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The mathematical model of the magnetic memory cell MRAM with the in-plane anisotropy axis parallel to the edge of a free ferromagnetic layer (longitudinal anisotropy) has been constructed using approximation of uniform magnetization. The model is based on the Landau–Lifshits–Gilbert equation with the injection-current term in the Sloncžewski–Berger form. The set of ordinary differential equations for magnetization dynamics in a three-layered Co/Cu/Cu valve under the control of external magnetic field and spin-polarized current has been derived in the normal coordinate form. It was shown that the set of equations has two main stationary points on the anisotropy axis at any values of field and current. The stationary analysis of them has been performed. The algebraic equations for determination of additional stationary points have been derived. It has been shown that, depending on the field and current magnitude, the set of equations can have altogether two, four, or six stationary points symmetric in pairs relatively the anisotropy axis. The bifurcation diagrams for all the points have been constructed. The classification of the corresponding phase portraits has been performed. The typical trajectories were calculated numerically using Runge–Kutta method. The regions, where stable and unstable limit cycles exist, have been determined. It was found that the unstable limit cycles exist around the main stable equilibrium point on the axis that coincides with the anisotropy one, whereas the stable cycles surround the unstable additional points of equilibrium. The area of their existence was determined numerically. The new types of dynamics, such as accidental switching and non-complete switching, have been found. The threshold values of switching current and field have been obtained analytically. The estimations of switching times have been performed numerically.

Keywords: MRAM, uniaxial anisotropy, magnetization, free layer, fixed layer, the Landau–Lifshits–Gilbert equation, magnetization reversal
Citation in English: Ostrovskaya N.V., Skidanov V.A., Iusipova I.A. Classification of dynamical switching regimes in a three-layered ferromagnetic nanopillar governed by spin-polarized injection current and external magnetic field. I. Longitudinal anisotropy // Computer Research and Modeling, 2016, vol. 8, no. 4, pp. 605-620
Citation in English: Ostrovskaya N.V., Skidanov V.A., Iusipova I.A. Classification of dynamical switching regimes in a three-layered ferromagnetic nanopillar governed by spin-polarized injection current and external magnetic field. I. Longitudinal anisotropy // Computer Research and Modeling, 2016, vol. 8, no. 4, pp. 605-620
DOI: 10.20537/2076-7633-2016-8-4-605-620
URL: http://crm-en.ics.org.ru/journal/article/2477/
Creative Commons License This work is licensed under a Creative Commons Attribution-NoDerivs 3.0 Unported License.
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