All issues

The mathematical model of the magnetic memory cell MRAM with the in-plane anisotropy axis parallel to the edge of a free ferromagnetic layer (longitudinal anisotropy) has been constructed using approximation of uniform magnetization. The model is based on the Landau–Lifshits–Gilbert equation with the injection-current term in the Sloncžewski–Berger form. The set of ordinary differential equations for magnetization dynamics in a three-layered Co/Cu/Cu valve under the control of external magnetic field and spin-polarized current has been derived in the normal coordinate form. It was shown that the set of equations has two main stationary points on the anisotropy axis at any values of field and current. The stationary analysis of them has been performed. The algebraic equations for determination of additional stationary points have been derived. It has been shown that, depending on the field and current magnitude, the set of equations can have altogether two, four, or six stationary points symmetric in pairs relatively the anisotropy axis. The bifurcation diagrams for all the points have been constructed. The classification of the corresponding phase portraits has been performed. The typical trajectories were calculated numerically using Runge–Kutta method. The regions, where stable and unstable limit cycles exist, have been determined. It was found that the unstable limit cycles exist around the main stable equilibrium point on the axis that coincides with the anisotropy one, whereas the stable cycles surround the unstable additional points of equilibrium. The area of their existence was determined numerically. The new types of dynamics, such as accidental switching and non-complete switching, have been found. The threshold values of switching current and field have been obtained analytically. The estimations of switching times have been performed numerically.

The mathematical model of a three-layered Co/Cu/Co nanopillar for MRAM cell with one fixed and one free layer was investigated in the approximation of uniformly distributed magnetization. The anisotropy axis is perpendicular to the layers (so-called perpendicular anisotropy). Initially the magnetization of the free layer is oriented along the anisotropy axis in the position accepted to be “zero”. Simultaneous magnetic field and spinpolarized current engaging can reorient the magnetization to another position which in this context can be accepted as “one”. The mathematical description of the effect is based on the classical vector Landau–Lifshits equation with the dissipative term in the Gilbert form. In our model we took into account the interactions of the magnetization with an external magnetic field and such effective magnetic fields as an anisotropy and demagnetization ones. The influence of the spin-polarized injection current is taken into account in the form of Sloczewski–Berger term. The model was reduced to the set of three ordinary differential equations with the first integral. It was shown that at any current and field the dynamical system has two main equilibrium states on the axis coincident with anisotropy axis. It was ascertained that in contrast with the longitudinal-anisotropy model, in the model with perpendicular anisotropy there are no other equilibrium states. The stability analysis of the main equilibrium states was performed. The bifurcation diagrams characterizing the magnetization dynamics at different values of the control parameters were built. The classification of the phase portraits on the unit sphere was performed. The features of the dynamics at different values of the parameters were studied and the conditions of the magnetization reorientation were determined. The trajectories of magnetization switching were calculated numerically using the Runge–Kutta method. The parameter values at which limit cycles exist were determined. The threshold values for the switching current were found analytically. The threshold values for the structures with longitudinal and perpendicular anisotropy were compared. It was established that in the structure with the perpendicular anisotropy at zero field the switching current is an order lower than in the structure with the longitudinal one.