<p>Classification of dynamical switching regimes in a three-layered ferromagnetic nanopillar governed by spin-polarized injection current and external magnetic field. II. Perpendicular anisotropy</p>

Ostrovskaya N.V.; Skidanov V.A.; Skvortsov M.S.

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Classification of dynamical switching regimes in a three-layered ferromagnetic nanopillar governed by spin-polarized injection current and external magnetic field. II. Perpendicular anisotropy

Ostrovskaya N.V., Skidanov V.A., Skvortsov M.S.

pdf (3565K) / Annotation

List of references:

P. Kh. Amiri, Z. M. Zeng, J. Langer, H. Zhao, et al. Switching current reduction using perpendicular anisotropy in CoFeB–MgO magnetic tunnel junctions // Appl. Phys. Lett. — 2011. — V. 98. — 112507. — DOI: 10.1063/1.3567780.
D. T. Denny, Y. Lee. Magnetic Memory: Fundamentals and Technology. — Cambridge University Press, 2010. — 208 p.
W. Desin, X. Haiwen, Zh. Yuankai, D. Dimitrov. RAM cells with perpendicular anisotropy. — 2010. — US PATENT Application Publication, Pub. No. US 2010/0109110 AI.
F. Ilievski, J. C. Perkinson, C. A. Ross. Magnetic reversal phenomena in pseudo-spin-valve films with perpendicular anisotropy // J. Appl. Phys. — 2007. — V. 101. — 09D116. — DOI: 10.1063/1.2712942.
S. Mangin, D. Ravelosona, Y. Henry, J. A. Katine, Fullerton E. E.. . Spin Transfer Torque Effects in Devices with Perpendicular Anisotropy // AAPPS Bulletin. — 2008. — V. 18, no. 6. — P. 41–46.
N. V. Ostrovskaya, V. A. Skidanov, I. A. Iusipova. Bifurcations in the dynamical system for threelayered magnetic valve // Solid State Phenomena. — 2015. — V. 233. — P. 431–434. — DOI: 10.4028/www.scientific.net/SSP.233-234.431.
S. N. Piramanayagam, Chong T. C.. . Developments in Data Storage: Materials and Perspective. — John Wiley & Sons, Inc, 2011. — 347 p.
J. Slonczewski. Current-driven excitation of magnetic multilayers // J. Magn. Magn. Matter. — 1996. — V. 159. — P. L1–L7. — DOI: 10.1016/0304-8853(96)00062-5.
H. Yiming. Perpendicular magnetization magnetic element utilizing spin transfer. — 2005. — US PATENT No. US 6,967,863 B2.

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